? 2008 ixys corporation, all rights reserved ds99738f(12/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 100 a r ds(on) v gs = 10v, i d = 7a, note 1 550 m polarhv tm power mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated fast intrinsic diode IXTP14N60PM symbol test conditions maximum ratings v dss t j = 25c to 150c 600 v v dgr t j = 25c to 150c, r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 7 a i dm t c = 25 c, pulse width limited by t jm 42 a i a t c = 25 c 14 a e as t c = 25 c 900 mj dv/dt i s i dm , v dd v dss , t j = 150 c 10 v/ns p d t c = 25 c 75 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 2.5 g features plastic overmolded tab for electrical isolation international standard package avalanche rated fast intrinsic diode low package inductance advantages easy to mount space savings applications: switched-mode and resonant-mode power supplies dc-dc converters laser drivers ac and dc motor drives robotics and servo controls v dss = 600v i d25 = 7a r ds(on) 550m g = gate d = drain s = source overmolded (i xtp...m ) outline g d s isolated tab
IXTP14N60PM ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 7a, note 1 7 13 s c iss 2500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 215 pf c rss 13 pf t d(on) 23 ns t r 27 ns t d(off) 70 ns t f 26 ns q g(on) 36 nc q gs v gs = 10v, v ds = 0.5 v dss , i d = 7a 16 nc q gd 12 nc r thjc 1.66 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 14 a i sm repetitive, pulse width limited by t jm 42 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns notes:1. pulse test, t 300 s; duty cycle, d 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 isolated to-220 (i xtp...m ) i f = 14a, -di/dt = 100a/ s, v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 v dss , i d = 7a r g = 10 (external)
? 2008 ixys corporation, all rights reserved IXTP14N60PM fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 012345678 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 024681012141618 v ds - volts i d - amperes v gs = 10v 8v 6v 7v fig. 4. r ds(on) normalized to i d = 7a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 14a i d = 7a fig. 5. r ds(on) normalized to i d = 7a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 036912151821242730 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes ixys ref: f_14n60p(5j)12-22-08-g
IXTP14N60PM ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12162024283236 q g - nanocoulombs v gs - volts v ds = 300v i d = 7a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0 1 10 100 10 100 1000 v ds - volts i d - amperes 25s 100s 1ms 10ms dc r ds(on) limit t j = 150oc t c = 25oc single pulse
? 2008 ixys corporation, all rights reserved fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w IXTP14N60PM ixys ref: f_14n60p(5j)12-22-08-g
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